Datasheet Details
| Part number | BU326A |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 43.95 KB |
| Description | HIGH VOLTAGE NPN SILICON POWER TRANSISTOR |
| Datasheet | BU326A_STMicroelectronics.pdf |
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Overview: ® BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS: POWER SUPPLIES s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s 1.
| Part number | BU326A |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 43.95 KB |
| Description | HIGH VOLTAGE NPN SILICON POWER TRANSISTOR |
| Datasheet | BU326A_STMicroelectronics.pdf |
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The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case particularly intended for switch-mode CTV supply system.
INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Power Dissipation at T case ≤ 25 o C Storage Temperature Max.
Operating Junction Temperature Value 900 400 10 6 8 3 75 -65 to 200 200 Unit V V V A A A W o o C C December 2000 1/4 BU326A THERMAL DATA R thj-case Thermal Resistance Junction-case Max 2.33 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 900 V V CE = 900 V V EB = 10 V I C = 100 mA 400 T c = 125 o C Min.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BU326A | Silicon NPN Transistor | Toshiba |
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BU326A | SILICON POWER TRANSISTOR | SavantIC |
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BU326A | NPN Transistor | INCHANGE |
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BU326 | SILICON POWER TRANSISTOR | SavantIC |
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BU326 | NPN Transistor | INCHANGE |
| Part Number | Description |
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