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BU500 - Silicon NPN Transistor

Key Features

  • . High Voltage : V CES =1500V . Low Saturation Voltage : V CE ( sat )=lV (Max. ).
  • Fall Time : tf=0.7/is (Typ. ) . Glass Passivated Base-Collector Junction. Unit in mm m025OMAX. 02 1.0 MAX + 0.09 01.0-0.03 3 0.2 ±0.2.

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Datasheet Details

Part number BU500
Manufacturer Toshiba
File Size 38.49 KB
Description Silicon NPN Transistor
Datasheet download datasheet BU500 Datasheet

Full PDF Text Transcription for BU500 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BU500. For precise diagrams, and layout, please refer to the original PDF.

SILICON NPN TRIPLE DIFFUSED MESA TYPE BU500 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES . High Voltage : V CES =1500V . Low Saturation Voltage : V CE ( sat )=lV (Ma...

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Voltage : V CES =1500V . Low Saturation Voltage : V CE ( sat )=lV (Max.) • Fall Time : tf=0.7/is (Typ.) . Glass Passivated Base-Collector Junction. Unit in mm m025OMAX. 02 1.0 MAX + 0.09 01.0-0.03 3 0.2 ±0.2 MAXIMUM RATINGS (Tc=25°c) CHARACTERISTIC Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak Base Current (Peak) Total Power Dissipation (Tc=95°C) Junction Temperature Storage Temperature Range Thermal Resistance SYMBOL V CES v EBO IC X CM IBM L stg R th(j-c) RATING 1500 7.5 12.5 +115 -65-115 1.6 UNIT V °C/W 1. BASE 2. EMITTER COLLECTOR (CASE) TOSHIBA TO— TC— 3, TB— 2— 21B1A Mounting Kit No. AC42