Datasheet Details
| Part number | BU500 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.71 KB |
| Description | NPN Transistor |
| Datasheet | BU500-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BU500 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.71 KB |
| Description | NPN Transistor |
| Datasheet | BU500-INCHANGE.pdf |
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·High Voltage-VCEX= 1500V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 4.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCEX Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 16 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 4 A 75 W 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.66 ℃/W BU500 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 100mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BU500 | NPN SILICON POWER METAL TRANSISTOR | Motorola Inc |
 |
BU500 | Silicon NPN Transistor | Toshiba |
 |
BU500 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| BU505 | NPN Transistor |
| BU505D | NPN Transistor |
| BU505DF | NPN Transistor |
| BU505F | NPN Transistor |
| BU506 | NPN Transistor |
| BU506A | NPN Transistor |
| BU506D | NPN Transistor |
| BU506DF | NPN Transistor |
| BU506F | NPN Transistor |
| BU508 | NPN Transistor |