BU500 - Silicon NPN Transistor

Features

. High Voltage : V CES =1500V . Low Saturation Voltage : V CE ( sat )=lV (Max. ).
Fall Time : tf=0.7/is (Typ. ) . Glass Passivated Base-Collector Junction. Unit in mm m025OMAX. 02 1.0 MAX + 0.09 01.0-0.03 3 0.2 ±0.2.

Toshiba

Datasheet Details

Part number	BU500
Manufacturer	Toshiba
File Size	38.49 KB
Description	Silicon NPN Transistor
Datasheet	BU500 Datasheet
Additional preview pages of the BU500 datasheet.

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Full PDF Text Transcription

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SILICON NPN TRIPLE DIFFUSED MESA TYPE BU500 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES . High Voltage : V CES =1500V . Low Saturation Voltage : V CE ( sat )=lV (Max.) • Fall Time : tf=0.7/is (Typ.) . Glass Passivated Base-Collector Junction. Unit in mm m025OMAX. 02 1.0 MAX + 0.09 01.0-0.03 3 0.2 ±0.2 MAXIMUM RATINGS (Tc=25°c) CHARACTERISTIC Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak Base Current (Peak) Total Power Dissipation (Tc=95°C) Junction Temperature Storage Temperature Range Thermal Resistance SYMBOL V CES v EBO IC X CM IBM L stg R th(j-c) RATING 1500 7.5 12.5 +115 -65-115 1.6 UNIT V °C/W 1. BASE 2. EMITTER COLLECTOR (CASE) TOSHIBA TO— TC— 3, TB— 2— 21B1A Mounting Kit No. AC42 Weight : 17.

Published: Jul 16, 2018 |