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I
2SC496,
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES
• Low Collector Saturation Voltage : v CE(sat) =0 - 25v (Typ.)
• 0.5^2 Watts Output Application.
' Complementary to 2SA505 and 2SA496.
Unit in mm
jzfei±o.i 5
&4
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current
2SC495 2SC496
2SC495 2SC496
Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO
v CE0 v EB0 IC IE PC
Tstg
RATING 70 40 50 30
UNIT
-1
150 -55 ^ 150
X EMITTER 2. COLLECTOR (HEAT SINK) a BASE
TO 12 6
Mounting Kit No. AC46C Weight : 0.72g
ELtCTRICAL CHARACTERISTICS CHARACTERISTIC
(Ta=25°C) SYMBOL
TEST CONDITION
MIN. TYP.
C495 Datasheet
