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Toshiba Electronic Components Datasheet

C5092 Datasheet

2SC5092

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5092
2SC5092
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, high gain.
· NF = 1.8dB, |S21e|2 = 9.5dB (f = 2 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
Rating
20
10
1.5
20
40
150
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Microwave Characteristics (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
2-3J1C
Weight: 0.012 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
ïS21eï2 (1)
ïS21eï2 (2)
NF (1)
NF (2)
VCE = 8 V, IC = 20 mA
VCE = 8 V, IC = 20 mA, f = 1 GHz
VCE = 8 V, IC = 20 mA, f = 2 GHz
VCE = 8 V, IC = 5 mA, f = 1 GHz
VCE = 8 V, IC = 5 mA, f = 2 GHz
Min Typ. Max Unit
7 10 ¾ GHz
12 15 ¾
dB
6.5 9.5 ¾
¾ 1.4 2.5
dB
¾ 1.8
3
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
IEBO
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 8 V, IC = 20 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
Cre
¾
¾
50
¾
¾
Note 1: hFE classification R: 50~100, O: 80~160
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Typ.
¾
¾
Max
1
1
¾ 160
0.7
0.45
1.1
0.95
Unit
mA
mA
pF
pF
1 2003-03-19


Toshiba Electronic Components Datasheet

C5092 Datasheet

2SC5092

No Preview Available !

Marking
2SC5092
2 2003-03-19


Part Number C5092
Description 2SC5092
Maker Toshiba
Total Page 7 Pages
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