Datasheet Summary
Schottky Barrier Diode Silicon Epitaxial
1. Applications
- High-Speed Switching
2. Features
(1) Small package (2) Low forward voltage: VF(2) = 0.47 V (typ.)
3. Packaging and Internal Circuit
CST2C
1: Cathode 2: Anode
©2015 Toshiba Corporation
Start of mercial production
2014-01
2015-11-13 Rev.3.0
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