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Toshiba Electronic Components Datasheet

CES388 Datasheet

Schottky Barrier Diode

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Schottky Barrier Diode Silicon Epitaxial
CES388
1. Applications
• High-Speed Switching
2. Features
(1) Low forward voltage : VF(3) = 0.54 V (typ).
(2) Low reverse current : IR(1) = 1 µA (max).
(3) Small and compact ESC package, equivalent to SOD-523 and SC-79
packages.
3. Packaging and Internal Circuit
CES388
1: Cathode
2: Anode
ESC
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
Reverse voltage
VRM
VR
45 V
40
Peak forward current
Average rectified current
Non-repetitive peak forward surge current
Power dissipation
Junction temperature
IFM
IO
IFSM
PD
Tj
(Note 1)
(Note 2)
300
100
1
150
125
mA
A
mW
Storage temperature
Tstg -55 to 125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Measured with a 10ms pulse.
Note 2: Mounted on a glass-epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
1 2012-05-24
Rev.1.0


Toshiba Electronic Components Datasheet

CES388 Datasheet

Schottky Barrier Diode

No Preview Available !

CES388
5. Electrical Characteristics (Unless otherwise specified, Ta = 25)
Characteristics
Forward voltage
Reverse current
Total capacitance
6. Marking
Symbol
Test Condition
VF(1)
VF(2)
VF(3)
IR(1)
IR(2)
Ct
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 10 V
VR = 40 V
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
0.21
V
0.30
0.54 0.60
  1 µA

5
11 25 pF
Fig. 6.1 Marking
Marking Code
R3
Part Number
CES388
7. Usage Considerations
• Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs
more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both
forward and reverse power losses of SBDs should be considered for thermal and safety design.
8. Land pattern dimensions for reference only
Fig. 8.1 Land pattern dimensions for reference only (Unit: mm)
2 2012-05-24
Rev.1.0


Part Number CES388
Description Schottky Barrier Diode
Maker Toshiba
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CES388 Datasheet PDF






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