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CRS10I40B - Schottky Barrier Diode

Key Features

  • (1) Peak forward voltage: VFM = 0.45 V (max) @IFM = 1 A (2) Average forward current: IF(AV) = 1 A (3) Repetitive peak reverse voltage: VRRM = 40 V (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: S-FLATTM 3. Packaging and Internal Circuit CRS10I40B 1: Anode 2: Cathode 3-2A1S 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage VRRM 40 V Average forward curre.

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Datasheet Details

Part number CRS10I40B
Manufacturer Toshiba
File Size 172.27 KB
Description Schottky Barrier Diode
Datasheet download datasheet CRS10I40B Datasheet

Full PDF Text Transcription for CRS10I40B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CRS10I40B. For precise diagrams, and layout, please refer to the original PDF.

Schottky Barrier Diode CRS10I40B 1. Applications • Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices 2. Features (1) Peak for...

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Reverse-Current Protection in Mobile Devices 2. Features (1) Peak forward voltage: VFM = 0.45 V (max) @IFM = 1 A (2) Average forward current: IF(AV) = 1 A (3) Repetitive peak reverse voltage: VRRM = 40 V (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: S-FLATTM 3. Packaging and Internal Circuit CRS10I40B 1: Anode 2: Cathode 3-2A1S 4.

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