Datasheet4U Logo Datasheet4U.com

DF2S6P2FU - ESD Protection Diodes

Features

  • (1) Suitable for use with a 5.0 V signal line. (VRWM ≤ 5.5 V) (2) Protects devices with its high ESD performance. (VESD = ±30 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.08 Ω (typ. )) (4) Low clamping voltage characteristic protects semiconductor devices from static electricity and noise. (VC = 18 V@IPP = 80 A (typ. )) (5) Compact package is suitable for use in high density board layouts such as in mobile.

📥 Download Datasheet

Datasheet preview – DF2S6P2FU

📁 Similar Datasheet

  • DF2S6.2FS - Diodes for Protecting against ESD (Toshiba Semiconductor)
  • DF2S6.8FS - ESD Protection Diodes (Toshiba Semiconductor)
  • DF2S6.8S - Diodes for Protecting against ESD (Toshiba Semiconductor)
  • DF2S6.8S - ESD Protection Diodes (Toshiba Semiconductor)
  • DF2S6.8UCT - ESD Protection Diodes (Toshiba Semiconductor)
  • DF2S6.8UFS - ESD Protection Diodes (Toshiba Semiconductor)
  • DF2S6M4SL - ESD Protection Diodes (Toshiba Semiconductor)
  • DF2S12FU - Diode (Toshiba Semiconductor)
  • DF2S24FS - ESD Protection Diodes (Toshiba Semiconductor)
  • DF2S24UCT - ESD Protection Diodes (Toshiba Semiconductor)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
ESD Protection Diodes Silicon Epitaxial Planar DF2S6P2FU DF2S6P2FU 1. General The DF2S6P2FU is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. The DF2S6P2FU has realized high IPP, in order to protect a semiconductor devices from the indirect lightning stroke and the transition voltage (at the time of power activation). Furthermore, the DF2S6P2FU is housed in an standard package (2.5 mm × 1.25 mm), it can be used for various applications. 2.
Published: |