DSR01S30SL Datasheet Schottky Barrier Diode

Manufacturer: Toshiba

Datasheet Details

Schottky Barrier Diode Silicon Epitaxial DSR01S30SL 1.

Applications • High-Speed Switching 2.

(1) Low reverse current: IR = 0.7 µA (max) @ VR = 30 V 3. Packaging and Internal Circuit DSR01S30SL 1: Cathode 2: Anode SL2 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 30 V Peak forward current IFM 200 mA Average rectified current IO (Note 1) 100 mA Non-repetitive peak forward surge current IFSM (Note 2) 2 A Junction temperature Tj 125  Storage temperature Tstg -55 to 125  Note:.

Brand Logo	Part Number	Description	Manufacturer
	DSR01S30SC	Silicon Epitaxial Schottky Barrier Type Diode	Toshiba Semiconductor

Part Number	Description