Schottky Barrier Diode Silicon Epitaxial DSR01S30S.
Toshiba
DSR01S30SL - Schottky Barrier Diode
Schottky Barrier Diode Silicon Epitaxial DSR01S30SL 1. Applications • High-Speed Switching 2. Features (1) Low reverse current: IR = 0.7 µA (max) @ VR.