* (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.25 µs (typ.) (IC = 60 A) (5) Low saturation voltage: VCE(sat) = 1.65 V (typ.) (IC = 30 A, Ta = 25
* ) (6) High junction
GT30N135SRA Datasheet (559.98 KB)
GT30N135SRA
559.98 KB
Silicon n-channel igbt.
Discrete IGBTs Silicon N-Channel IGBT GT30N135SRA GT30N135SRA 1. Applications Dedicated to Voltage-Resonant Inverter Switching Application.
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