GT60J323H Description
GT60J323H TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H Current Resonance Inverter Switching Application Induction Heating Cooking Appliances Induction Heating Appliances Enhancement mode type High speed : tf = 0.12 μs (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 2.1 V (typ.) (IC = 60A) FRD included between emitter and collector Fourth generation IGBT TO-3P(LH) (Toshiba package...