GT60J323 datasheet by Toshiba.
| Part number | GT60J323 |
|---|---|
| Datasheet | GT60J323-ToshibaSemiconductor.pdf |
| File Size | 169.69 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
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GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application Enhancement mode type High speed : tf = 0.16 μs (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A) FRD included between emitter and collector Fourth generation IGBT TO-3P(LH) (Toshiba package name) Unit:.
View GT60J323H datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
GT60J323H | Silicon N-Channel IGBT | Toshiba |
| Part Number | Description |
|---|---|
| GT60J322 | Silicon N-Channel IGBT |
| GT60M104 | Silicon N-Channel IGBT |
| GT60M301 | Silicon N-Channel MOSFET |
| GT60M302 | Silicon N-Channel MOSFET |
| GT60M303 | Silicon N-Channel IGBT |
| GT60N321 | Silicon N-Channel IGBT |
| GT60N322 | Silicon N-Channel IGBT |
