GT60J323
GT60J323 is Silicon N-Channel IGBT manufactured by Toshiba.
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Current Resonance Inverter Switching Application
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- - Enhancement mode type High speed : tf = 0.16 μs (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A) FRD included between emitter and collector Fourth generation IGBT TO-3P(LH) (Toshiba package name) Unit:...
