GT60J323 - Silicon N-Channel IGBT

Toshiba

Datasheet Details

Part number	GT60J323
Manufacturer	Toshiba
File Size	169.69 KB
Description	Silicon N-Channel IGBT
Datasheet	GT60J323 Datasheet

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GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application • • • • • • Enhancement mode type High speed : tf = 0.16 μs (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 1.9 V (typ.