GT60J323H datasheet by Toshiba.
| Part number | GT60J323H |
|---|---|
| Datasheet | GT60J323H-Toshiba.pdf |
| File Size | 234.69 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
|
|
GT60J323H TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H Current Resonance Inverter Switching Application Induction Heating Cooking Appliances Induction Heating Appliances Enhancement mode type High speed : tf = 0.12 μs (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 2.1 V (typ.) (IC = 60A) FRD included between emitter and collector Fourth generation IGBT TO-3P(LH) (Toshiba package...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
GT60J323 | Silicon N-Channel IGBT | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
| GT60J321 | Silicon N-Channel IGBT |
| GT60M322 | Silicon N-Channel IGBT |
| GT60M323 | Silicon N-Channel IGBT |
| GT60M324 | Silicon N-Channel IGBT |
| GT60N323 | Silicon N-Channel IGBT |
| GT60PR21 | Silicon N-Channel IGBT |
