HN1A01FE - Silicon PNP Epitaxial Type Transistor

Product Overview

Toshiba

Part number	HN1A01FE
Manufacturer	Toshiba
File Size	281.78 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	HN1A01FE Datasheet
Additional preview pages of the HN1A01FE datasheet.

(1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) High voltage: VCEO = -50 V (4) High collector current: IC = -150 mA (max) (5) High hFE: hFE = 120 to 400 (6) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ. ) 3. Packaging and Internal Circuit HN1A01FE ES6 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1 ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 200.

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Published: May 20, 2024 |