HN1A01FE
HN1A01FE is Silicon PNP Epitaxial Type Transistor manufactured by Toshiba.
Features
(1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) High voltage: VCEO = -50 V (4) High collector current: IC = -150 m A (max) (5) High h FE: h FE = 120 to 400 (6) Excellent h FE linearity: h FE (IC = -0.1 m A)/h FE (IC = -2 m A) = 0.95 (typ.)
3. Packaging and Internal Circuit
ES6
1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1
©2021
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2000-05
2021-08-18 Rev.1.0
4. Orderable part number
Orderable part number
AEC-Q101
Note
HN1A01FE-Y
HN1A01FE-Y,LF
- General Use
HN1A01FE-Y,LXGF
(Note 1) Unintended Use
HN1A01FE-GR
HN1A01FE-Y,LXHF HN1A01FE-GR,LF
- Automotive Use General Use
HN1A01FE-GR,LXGF
(Note 1) Unintended Use
HN1A01FE-GR,LXHF
Automotive Use
Note 1: For more information, please contact our sales or use the inquiry form on our website.
(Note 1) (Note 1)
5. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25- ) (Q1, Q2 mon)
Characteristics
Note
Symbol
Rating
Unit
Collector-base...
