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HN1A01FU - PNP Transistors

Key Features

  • s.
  • High voltage and high current.
  • High hFE: hFE = 120~400.
  • Excellent hFE linearity.
  • Small package (Dual type).
  • Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Base current Collector Power Dissipation Junction Temperature Storage Temperature range Symbol VCBO VCEO VEBO IC IB PC TJ Tstg Rating -50 -50 -5 -150 -30 200 125 -55 to 125 Unit V mA mW ℃.
  • Electrical Cha.

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SMD Type PNP Transistors HN1A01FU (KN1A01FU ) Transistors ■ Features ● High voltage and high current ● High hFE: hFE = 120~400 ● Excellent hFE linearity ● Small package (Dual type) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Base current Collector Power Dissipation Junction Temperature Storage Temperature range Symbol VCBO VCEO VEBO IC IB PC TJ Tstg Rating -50 -50 -5 -150 -30 200 125 -55 to 125 Unit V mA mW ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation