HN1A01FE Datasheet Silicon PNP Epitaxial Type Transistor

Manufacturer: Toshiba

Overview: Bipolar Transistors Silicon PNP Epitaxial Type HN1A01FE 1. Applications • Low-Frequency Amplifiers 2.

Datasheet Details

Part number	HN1A01FE
Manufacturer	Toshiba
File Size	281.78 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	HN1A01FE-Toshiba.pdf

(1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) High voltage: VCEO = -50 V (4) High collector current: IC = -150 mA (max) (5) High hFE: hFE = 120 to 400 (6) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ. ) 3. Packaging and Internal Circuit HN1A01FE ES6 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1 ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 200.

Brand Logo	Part Number	Description	Manufacturer
	HN1A01FU	PNP Transistors	Kexin

Part Number	Description
HN1A01F	Silicon PNP Epitaxial Type Transistor
HN1A01FU	Silicon PNP Epitaxial Type Transistor
HN1A02F	Silicon PNP Epitaxial Type Transistor
HN1A07F	Silicon PNP Epitaxial Type Transistor
HN1B01F	Silicon PNP/NPN Transistor
HN1B01FU	Silicon PNP/NPN Epitaxial Type Transistor
HN1B04FE	Silicon PNP/NPN Epitaxial Type Transistor
HN1B04FU	Silicon PNP/NPN Epitaxial Type Transistor
HN1C01F	Silicon NPN Epitaxial Type Transistor
HN1C01FE	Silicon NPN Epitaxial Type Transistor