HN1B04FU
Features
(1) High voltage: VCEO = 50 V (2) High collector current: IC = 150 m A (max) (3) High h FE: h FE = 120 to 400 (4) Excellent h FE linearity: h FE (IC = 0.1 m A)/h FE (IC = 2 m A) = 0.95 (typ.)
3. Q2 Features
(1) High voltage: VCEO = -50 V (2) High collector current: IC = -150 m A (max) (3) High h FE: h FE = 120 to 400 (4) Excellent h FE linearity: h FE (IC = -0.1 m A)/h FE (IC = -2 m A) = 0.95 (typ.)
4. Q1, Q2 mon Features
(1) AEC-Q101 qualified (Please see the orderable part number list)
5. Packaging and Internal Circuit
US6
1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1
©2021-2022
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
1992-10
2022-03-04 Rev.3.0
6. Orderable part number
Orderable part number
AEC-Q101
Note
HN1B04FU-Y
HN1B04FU-Y,LF
- General Use
HN1B04FU-Y,LXGF
(Note 1) Unintended Use
HN1B04FU-GR
HN1B04FU-Y,LXHF HN1B04FU-GR,LF
- Automotive Use General Use
HN1B04FU-GR,LXGF
(Not...
