HN1C07F
HN1C07F is Silicon NPN Epitaxial Type Transistor manufactured by Toshiba.
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications
Unit: mm z Excellent Currrent gain(h FE ) linearity : h FE(2) = 25 (min) at VCE = 6V, IC = 400m A
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 mon)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage Collector current Base current Collector power dissipation
VEBO IC IB PC-
500 m A
50 m A
300 m W
1.EMITTER1 (E1)
2.BASE1
(B1)
3.COLLECTOR2 (C2)
4.EMITTER2 (E2)
5.BASE2
(B2)
6.COLLECTOR1 (C1)
Junction temperature
Tj
°C
JEDEC
―
Storage temperature range
Tstg
- 55 to...
