HN2D01JE Overview
TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01JE Ultra High Speed Switching Application HN2D01JE Unit: mm ⚫ The HN2D01JE is posed of 2 independent diodes. VF (3) = 0.98V (typ.) ⚫ Fast reverse recovery time.
| Part number | HN2D01JE |
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| Datasheet | HN2D01JE-Toshiba.pdf |
| File Size | 307.54 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Planar Type Diode |
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TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01JE Ultra High Speed Switching Application HN2D01JE Unit: mm ⚫ The HN2D01JE is posed of 2 independent diodes. VF (3) = 0.98V (typ.) ⚫ Fast reverse recovery time.