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HN2D01JE - Silicon Epitaxial Planar Type Diode

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Datasheet Details

Part number HN2D01JE
Manufacturer Toshiba
File Size 307.54 KB
Description Silicon Epitaxial Planar Type Diode
Datasheet download datasheet HN2D01JE Datasheet

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TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01JE Ultra High Speed Switching Application HN2D01JE Unit: mm ⚫ The HN2D01JE is composed of 2 independent diodes. ⚫ Low forward voltage : VF (3) = 0.98V (typ.) ⚫ Fast reverse recovery time : trr = 1.6ns (typ.) ⚫ Small total capacitance : CT = 0.5pF (typ.) Absolute Maximum Ratings (Ta = 25°C) (Note) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 85 V Reverse voltage Maximum (peak) forward current (Notre1) Average forward current (Notre1) Surge current (10ms) (Notre1) VR IFM IO IFSM 80 V 200 mA 100 mA 1 A 1.ANODE1 2.NC 3.ANODE2 4.CATHODE2 5.
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