HN2D02FU datasheet by Toshiba.
| Part number | HN2D02FU |
|---|---|
| Datasheet | HN2D02FU-Toshiba.pdf |
| File Size | 510.38 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Planar Type Diode |
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TOSHIBA Diode Silicon Epitaxial Planar Type HN2D02FU HN2D02FU Ultra High Speed Switching Application Unit: mm AEC-Q101 Qualified (Note1) HN2D02FU is posed of 3 independent diodes. VF(3) = 0.98 V (typ.) Fast reverse recovery time.
| Part Number | Description |
|---|---|
| HN2D01F | Silicon Epitaxial Planar Type Diode |
| HN2D01FU | Silicon Epitaxial Planar Type Diode |
| HN2D01JE | Silicon Epitaxial Planar Type Diode |
| HN2D03F | Silicon Epitaxial Planar Type Diode |
| HN20S01F | Silicon Epitaxial Schottky Barrier Type Diode |
| HN20S01FU | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2A01FU | Silicon PNP Epitaxial Type Transistor |
| HN2E04F | MULTI CHIP DISCRETE DEVICE |
| HN2S01F | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S01FU | Silicon Epitaxial Schottky Barrier Type Diode |
