Datasheet Details
| Part number | HN2D01JE |
|---|---|
| Manufacturer | Toshiba |
| File Size | 307.54 KB |
| Description | Silicon Epitaxial Planar Type Diode |
| Datasheet | HN2D01JE-Toshiba.pdf |
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Overview: TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01JE Ultra High Speed Switching Application HN2D01JE Unit: mm ⚫ The HN2D01JE is composed of 2 independent diodes. ⚫ Low forward voltage : VF (3) = 0.
| Part number | HN2D01JE |
|---|---|
| Manufacturer | Toshiba |
| File Size | 307.54 KB |
| Description | Silicon Epitaxial Planar Type Diode |
| Datasheet | HN2D01JE-Toshiba.pdf |
|
|
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| Part Number | Description |
|---|---|
| HN2D01F | Silicon Epitaxial Planar Type Diode |
| HN2D01FU | Silicon Epitaxial Planar Type Diode |
| HN2D02FU | Silicon Epitaxial Planar Type Diode |
| HN2D03F | Silicon Epitaxial Planar Type Diode |
| HN20S01F | Silicon Epitaxial Schottky Barrier Type Diode |
| HN20S01FU | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2A01FU | Silicon PNP Epitaxial Type Transistor |
| HN2E04F | MULTI CHIP DISCRETE DEVICE |
| HN2S01F | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S01FU | Silicon Epitaxial Schottky Barrier Type Diode |