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HN4B01JE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
HN4B01JE
Audio Frequency General Purpose Amplifier Applications
Q1:
z High voltage and high current : VCEO = 50V, IC = 150mA (max)
z High hFE : hFE = 120~400 z Excellent hFE linearity
: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)
Q2:
z High voltage and high current : VCEO = −50V, IC = −150mA (max)
z High hFE : hFE = 120~400 z Excellent hFE linearity
: hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
1.BASE1
(B1)
2.EMITTER
(E)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.
HN4B01JE Datasheet
