HN4B01JE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Audio Frequency General Purpose Amplifier Applications
Q1: z High voltage and high current : VCEO = 50V, IC = 150m A (max) z High h FE : h FE = 120~400 z Excellent h FE linearity
: h FE (IC = 0.1m A) / h FE (IC = 2m A) = 0.95 (typ.)
Q2: z High voltage and high current : VCEO =
- 50V, IC =
- 150m A (max) z High h FE : h FE = 120~400 z Excellent h FE linearity
: h FE (IC =
- 0.1m A) / h FE (IC =
- 2m A) = 0.95 (typ.)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
1.BASE1
(B1)
2.EMITTER
(E)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.COLLECTOR1 (C1)
Characteristic
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Symbol
VCBO VCEO VEBO
IC IB
Rating
60 50 5 150 30
Unit
JEDEC
―
JEITA
―
TOSHIBA
2-2L1C
Weight: 3.0mg (typ.) m A
Marking m A
Q2 Absolute Maximum Ratings (Ta =...
