| Title | 트랜지스터 - 양극(BJT) - 어레이 NPN, PNP(에미터 결합) 50V 150mA 80MHz 100mW 표면 실장 ESV |
| Description | HN4B01JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN4B01JE Audio Frequency General Purpose Amplifier Applications Q1: z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400 z Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2: z High voltage and high current : VCEO = −50V, IC =... |
| Features |
-emitter voltage Emitter-base voltage Collector current Base current
Symbol
VCBO VCEO VEBO
IC IB
Rating
−50 −50 −5 −150 −30
Unit
52
V
V
V
mA
Equivalent Circuit (Top View)
mA
5
4
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Q1
Q2
Characteristic
Symbol
Rating
Unit
Collector power dissipation Junction temperature
PC*
100
m...
|
| Datasheet |
 HN4B01JE Datasheet - 339.96KB |
| Distributor |
DigiKey |
| Stock | 3418 In stock |
| Price |
2000 units: 104.5365 KRW 1000 units: 117.216 KRW 500 units: 132.246 KRW 100 units: 178.58 KRW 10 units: 285.6 KRW 1 units: 462 KRW
|
| BuyNow |
 BuyNow - Manufacturer a Toshiba America Electronic Components HN4B01JE(TE85L,F)
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
DigiKey |
2000 units: 104.5365 KRW 1000 units: 117.216 KRW 500 units: 132.246 KRW 100 units: 178.58 KRW 10 units: 285.6 KRW 1 units: 462 KRW |
BuyNow |
|
 Mouser Electronics |
1 units: 0.36 USD 10 units: 0.251 USD 100 units: 0.104 USD 1000 units: 0.065 USD |
BuyNow |
