Full PDF Text Transcription for HN4B01JE (Reference)
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HN4B01JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN4B01JE Audio Frequency General Purpose Amplifier Applicati...
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Process) HN4B01JE Audio Frequency General Purpose Amplifier Applications Q1: z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400 z Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2: z High voltage and high current : VCEO = −50V, IC = −150mA (max) z High hFE : hFE = 120~400 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) Q1 Absolute Maximum Ratings (Ta = 25°C) Unit: mm 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.
HN4B01JE Datasheet
