HN4B06J is Silicon NPN/PNP Epitaxial Type Transistor manufactured by Toshiba.
| Part Number | Description |
|---|---|
| HN4B01JE | Silicon NPN/PNP Epitaxial Type Transistor |
| HN4B101J | Silicon NPN/PNP Epitaxial Type Transistor |
| HN4B102J | Silicon PNP/NPN Transistor |
| HN4A06J | Silicon PNP Epitaxial Type Transistor |
| HN4A08J | Silicon PNP Epitaxial Type Transistor |
HN4B06J TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN4B06J Audio Frequency General Purpose Amplifier Applications Unit: VCEO = −120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity.
