The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
HN4B06J
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
HN4B06J
Audio Frequency General Purpose Amplifier Applications
Unit: mm
Q1:
z High voltage : VCEO = −120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity
: hFE (IC = −0.1mA) / hFE (IC =− 2mA) = 0.95 (typ.)
Q2:
z High voltage : VCEO = 120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity
: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Symbol
VCBO VCEO VEBO
IC IB
Rating −120 −120
−5 −100 −20
Q2 Absolute Maximum Ratings (Ta = 25°C)
1.BASE1
(B1)
2.EMITTER
(E)
3.BASE2
(B2)
Unit
4.COLLECTOR2 (C2)
5.
HN4B06J Datasheet
