HN4B101J datasheet by Toshiba.
| Part number | HN4B101J |
|---|---|
| Datasheet | HN4B101J-Toshiba.pdf |
| File Size | 250.38 KB |
| Manufacturer | Toshiba |
| Description | Silicon NPN/PNP Epitaxial Type Transistor |
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HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Switching Applications Small footprint due to a small and thin package High DC current gain : hFE = 200 to 500 (IC = −0.12 A) Low collector-emitter saturation: PNP VCE (sat) = −0.20 V (max).
| Part Number | Description |
|---|---|
| HN4B102J | Silicon PNP/NPN Transistor |
| HN4B01JE | Silicon NPN/PNP Epitaxial Type Transistor |
| HN4B06J | Silicon NPN/PNP Epitaxial Type Transistor |
| HN4A06J | Silicon PNP Epitaxial Type Transistor |
| HN4A08J | Silicon PNP Epitaxial Type Transistor |
| HN4A51J | Silicon PNP Epitaxial Type Transistor |
| HN4A56JU | Silicon PNP Epitaxial Type Transistor |
| HN4C05JU | Multi Chip Discrete Device |
| HN4C06J | Silicon NPN Epitaxial Type Transistor |
| HN4C51J | Silicon NPN Epitaxial Type Transistor |
