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HN4B101J
TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)
HN4B101J
MOS Gate Drive Applications Switching Applications
• Small footprint due to a small and thin package • High DC current gain : hFE = 200 to 500 (IC = −0.12 A) • Low collector-emitter saturation: PNP VCE (sat) = −0.20 V (max)
: NPN VCE (sat) = 0.17 V (max) • High-speed switching : PNP tf = 45 ns (typ.)
: NPN tf = 50 ns (typ.)
2.9±0.2 1.9±0.2 0.95 0.95
+0.2 2.8 -0.3
+0.2 1.6 -0.1
Unit: mm
0.4±0.1
1
5
2 4
3
+0.1 0.16 -0.06
+0.2 1.1 -0.1
Absolute Maximum Ratings (Ta = 25°C)
0~0.
HN4B101J Datasheet
