HN4B101J
HN4B101J is Silicon NPN/PNP Epitaxial Type Transistor manufactured by Toshiba.
TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)
MOS Gate Drive Applications Switching Applications
- Small footprint due to a small and thin package
- High DC current gain : hFE = 200 to 500 (IC =
- 0.12 A)
- Low collector-emitter saturation: PNP VCE (sat) =
- 0.20 V (max)
: NPN VCE (sat) = 0.17 V (max)
- High-speed switching : PNP tf = 45 ns (typ.)
: NPN tf = 50 ns (typ.)
2.9±0.2 1.9±0.2 0.95 0.95
+0.2 2.8 -0.3
+0.2 1.6 -0.1
Unit: mm
0.4±0.1
2 4
+0.1 0.16 -0.06
+0.2 1.1...
