HN4B102J Overview
HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Switching Applications Small footprint due to a small and thin package High DC current gain : PNP hFE = 200 to 500 (IC =-0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A) Low collector-emitter saturation.