HN4B102J is Silicon PNP/NPN Transistor manufactured by Toshiba.
| Part Number | Description |
|---|---|
| HN4B101J | Silicon NPN/PNP Epitaxial Type Transistor |
| HN4B01JE | Silicon NPN/PNP Epitaxial Type Transistor |
| HN4B06J | Silicon NPN/PNP Epitaxial Type Transistor |
| HN4A06J | Silicon PNP Epitaxial Type Transistor |
| HN4A08J | Silicon PNP Epitaxial Type Transistor |
HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Switching Applications Small footprint due to a small and thin package High DC current gain : PNP hFE = 200 to 500 (IC =－0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A) Low collector-emitter saturation.
