HN4A08J Description
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A08J HN4A08J Low Frequency Power Amplifer Applications Power Switching Application Unit: mm z High DC Current Gain : hFE = 100 to 320 z Low Saturation Voltage.
- Part: HN4A08J
- Manufacturer: Toshiba
- Size: 223.97 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| HN4A06J | Silicon PNP Epitaxial Type Transistor |
| HN4A51J | Silicon PNP Epitaxial Type Transistor |
| HN4A56JU | Silicon PNP Epitaxial Type Transistor |
| HN4B01JE | Silicon NPN/PNP Epitaxial Type Transistor |
| HN4B06J | Silicon NPN/PNP Epitaxial Type Transistor |