Silicon PNP Epitaxial Type Transistor
| Part number | HN4A08J |
|---|---|
| Manufacturer | Toshiba |
| File Size | 223.97 KB |
| Description | Silicon PNP Epitaxial Type Transistor |
| Datasheet | HN4A08J-Toshiba.pdf |
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A08J HN4A08J Low Frequency Power Amplifer Applications Power Switching Application Unit: mm z High DC Current Gain : hFE = 100 to 320 z Low Saturation Voltage.
| Part Number | Description |
|---|---|
| HN4A06J | Silicon PNP Epitaxial Type Transistor |
| HN4A51J | Silicon PNP Epitaxial Type Transistor |
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| HN4B06J | Silicon NPN/PNP Epitaxial Type Transistor |
| HN4B101J | Silicon NPN/PNP Epitaxial Type Transistor |
| HN4B102J | Silicon PNP/NPN Transistor |
| HN4C05JU | Multi Chip Discrete Device |
| HN4C06J | Silicon NPN Epitaxial Type Transistor |
| HN4C51J | Silicon NPN Epitaxial Type Transistor |
