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HN4C51J - Silicon NPN Epitaxial Type Transistor

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Datasheet Details

Part number HN4C51J
Manufacturer Toshiba
File Size 328.40 KB
Description Silicon NPN Epitaxial Type Transistor
Datasheet download datasheet HN4C51J Datasheet

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C51J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) z Low noise : NF = 1dB(typ.) HN4C51J Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage Collector current Base current Collector power dissipation VEBO IC IB PC* 5 V 100 mA 20 mA 300 mW 1.EMITTER1 (E1) 2.BASE (B) 3.EMITTER2 (E2) 4.COLLECTOR2 (C2) 5.
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