JDV2S19S Overview
JDV2S19S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S19S VCO for the UHF band High capacitance ratio: C1V/C4V = 1.8 (typ.) Low series resistance: rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner.
JDV2S19S datasheet by Toshiba.
| Part number | JDV2S19S |
|---|---|
| Datasheet | JDV2S19S_Toshiba.pdf |
| File Size | 109.35 KB |
| Manufacturer | Toshiba |
| Description | VCO |
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JDV2S19S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S19S VCO for the UHF band High capacitance ratio: C1V/C4V = 1.8 (typ.) Low series resistance: rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner.
| Part Number | Description |
|---|---|
| JDV2S17S | VCO |