JDV2S17S
Overview
JDV2S17S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S17S VCO for UHF Band Radio • • • High Capacitance Ratio : C1V/C4V = 2.1 (typ.) Low Series Resistance : rs = 0.6 Ω (typ.) This device is suita...
| Part | JDV2S17S |
|---|---|
| Description | VCO |
| Manufacturer | Toshiba |
| Size | 156.00 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| JDV2S10FS | Toshiba | VCO |