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Toshiba Electronic Components Datasheet

K1530 Datasheet

2SK1530

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1530
2SK1530
High-Power Amplifier Application
High breakdown voltage
High forward transfer admittance
Complementary to 2SJ201
: VDSS = 200V
: |Yfs| = 5.0 S (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Gatesource voltage
Drain current
(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
PD
Tc
Tstg
Rating
200
±20
12
150
150
55~150
Marking
Unit
V
V
A
W
°C
°C
TOSHIBA
2SK1530
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Drain cutoff current
Gate leakage current
Drainsource breakdown voltage
Drainsource saturation voltage
Gatesource cutoff voltage (Note 2)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
IDSS
IGSS
V (BR) DSS
VDS (ON)
VGS (OFF)
|Yfs|
Ciss
Coss
Crss
VDS = 200 V, VGS = 0
VDS = 0V, VGS = ±20 V
ID = 10 mA, VGS = 0
ID = 8 A, VGS = 10 V
VDS = 10 V, ID = 0.1 A
VDS = 10 V, ID = 5 A
VDS = 30 V, VGS = 0, f = 1 MHz
VDS = 30 V, VGS = 0, f = 1 MHz
VDD = 30 V, VGS = 0, f = 1 MHz
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VGS (OFF) Classification
0: 0.8~1.6
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Y: 1.4~2.8
1
Min Typ. Max Unit
— — 1.0 mA
— — ±0.5 µA
200 —
V
— 2.5 5.0
V
0.8 — 2.8
V
— 5.0 —
S
— 900 —
— 180 —
pF
— 100 —
2004-07-06


Toshiba Electronic Components Datasheet

K1530 Datasheet

2SK1530

No Preview Available !

2SK1530
2 2004-07-06


Part Number K1530
Description 2SK1530
Maker Toshiba
Total Page 4 Pages
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