Datasheet4U Logo Datasheet4U.com

K7A65D - Silicon N-Channel MOSFET

📥 Download Datasheet

Datasheet preview – K7A65D

📁 Similar Datasheet

  • K7A161800A - 512K x 36 / x32 & 1M x 18 Synchronous SRAM (Samsung semiconductor)
  • K7A161801A - 512K x 36 / 32 & 1M x 18 Synchronous SRAM (Samsung semiconductor)
  • K7A161830B - 512Kx36 & 1Mx18 Synchronous SRAM (SAMSUNG ELECTRONICS)
  • K7A161831B - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE (Samsung semiconductor)
  • K7A163200A - 512K x 36 / x32 & 1M x 18 Synchronous SRAM (Samsung semiconductor)
  • K7A163200A - 512K x 36 / x32 & 1M x 18 Synchronous SRAM (Samsung semiconductor)
  • K7A163201A - 512K x 36 / 32 & 1M x 18 Synchronous SRAM (Samsung semiconductor)
  • K7A163600A - 512K x 36 / x32 & 1M x 18 Synchronous SRAM (Samsung semiconductor)
  • K7A163601A - 512K x 36 / 32 & 1M x 18 Synchronous SRAM (Samsung semiconductor)
  • K7A163630B - 512Kx36 & 1Mx18 Synchronous SRAM (SAMSUNG ELECTRONICS)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
TK7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK7A65D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.8 Ω(typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ф3.2 ± 0.2 10 ± 0.3 A Unit: mm 2.7 ± 0.2 3.9 3.0 15.0 ± 0.3 1.14 ± 0.15 2.8 MAX. 13 ± 0.5 Absolute Maximum Ratings (Ta = 25°C) 0.69 ± 0.15 Ф0.2 M A 2.6 ± 0.1 4.5 ± 0.
Published: |