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K80E08K3 - TK80E08K3

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Target Specification TK80E08K3 ) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS TK80E08K3 E-Bike/UPS/Inverter Unit: mm Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 7.5 mΩ (typ.) : |Yfs| = 135 S (typ.) : IDSS = 10 µA (max) (VDS = 75 V) : Vth = 2.0~4.
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