Datasheet Details
- Part number
- MG30G1BL2
- Manufacturer
- Toshiba ↗
- File Size
- 121.13 KB
- Datasheet
- MG30G1BL2_Toshiba.pdf
- Description
- Silicon NPN Triple Transistor
MG30G1BL2 Description
: SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER MODULE) IHB30 HGIH POWER SWITCHING APPLICATIONS..MG30G1BL2 Features
* . The Collector is Isolated from Ground. . High DC Current Gain : hpE=100(Min. ) (Ic=30A) . Low Saturation Voltage : VcE(sat)=2V(Max. ) (Ic=30A) . High Speed : tf=2As(Max. ) (Ic=30A) Unit in mm MAXIMUM RATINGS (Tc=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 600
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