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MG30G1BL2 - Silicon NPN Triple Transistor

Key Features

  • . The Collector is Isolated from Ground. . High DC Current Gain : hpE=100(Min. ) (Ic=30A) . Low Saturation Voltage : VcE(sat)=2V(Max. ) (Ic=30A) . High Speed : tf=2As(Max. ) (Ic=30A) Unit in mm.

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Datasheet Details

Part number MG30G1BL2
Manufacturer Toshiba
File Size 121.13 KB
Description Silicon NPN Triple Transistor
Datasheet download datasheet MG30G1BL2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER MODULE) IHB30 HGIH POWER SWITCHING APPLICATIONS. FEATURES . The Collector is Isolated from Ground. . High DC Current Gain : hpE=100(Min. ) (Ic=30A) . Low Saturation Voltage : VcE(sat)=2V(Max. ) (Ic=30A) . High Speed : tf=2As(Max. ) (Ic=30A) Unit in mm MAXIMUM RATINGS (Tc=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO(SUS) 450 V A Emitter-Base Voltage Vebo 6 V Collector Current DC Pulse Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range ic I flP IB PC T J T stg Isolation Voltage Visol Screw Torque ELECTRICAL CHARACTERISTICS (Ta=25 C) 30 60 2 250 150 -40-125 2000 (AC IMinute) 20 A 1. BASE A 2.