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RN1109 - Silicon NPN Epitaxial Type Transistors

This page provides the datasheet information for the RN1109, a member of the RN1107 Silicon NPN Epitaxial Type Transistors family.

Datasheet Summary

Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN2107 to 2109 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN1107 RN1108 RN1109 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 ©2021 1 Toshiba Electronic Devices & S.

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Datasheet Details

Part number RN1109
Manufacturer Toshiba
File Size 514.58 KB
Description Silicon NPN Epitaxial Type Transistors
Datasheet download datasheet RN1109 Datasheet
Additional preview pages of the RN1109 datasheet.

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Full PDF Text Transcription

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RN1107 to RN1109 Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1107/08/09 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN2107 to 2109 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN1107 RN1108 RN1109 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1990-12 2021-08-30 Rev.1.0 5.
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