Full PDF Text Transcription for RN1112F (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
RN1112F. For precise diagrams, and layout, please refer to the original PDF.
RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications...
View more extracted text
g, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2112F, RN2113F Equivalent Circuit Maximum Ratings (Ta = 25°C) Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating 50 50 Unit JEDEC V EIAJ V TOSHIBA 5V 100 mA 100 mW 150 °C −55~150 °C ― ― 2-2HA1A Electrical Characteristics (Ta = 25°C) Characteristi
RN1112F Datasheet
