RN1113MFV Datasheet | Toshiba

RN1112MFV, RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1112MFV, RN1113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm - Ultra-small package, suited to very high density mounting - Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more pact equipment and lowering assembly cost. - A wide range of resistor values is available for use in various circuits. - plementary to the RN2112MFV, RN2113MFV Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC (Note 1) Tj Tstg Rating 50 50 5 100 150 150 - 55 to 150 Unit V V V m A m W °C °C 1.BASE VESM 2.EMITTER 3.COLLECTOR JEDEC ― JEITA ― TOSHIBA 1-1Q1S Weight: 1.5 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm) Land Pattern Dimensions (for reference only) Unit：mm 1.15 0.4 0.4 0.4 Start of mercial production 2005-02 ©...