RN1113F
RN1113F is Silicon NPN Epitaxial Type Transistor manufactured by Toshiba.
RN1112F,RN1113F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1112F,RN1113F
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l plementary to RN2112F, RN2113F
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characterisstic
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
Ic Pc Tj Tstg
Rating
50 50
Unit JEDEC V EIAJ V TOSHIBA
5V
100 mA
100 mW
150 °C
- 55~150
°C
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