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RN1112F,RN1113F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1112F,RN1113F
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
Unit: mm
l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2112F, RN2113F
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characterisstic
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
Ic Pc Tj Tstg
Rating
50 50
Unit JEDEC V EIAJ V TOSHIBA
5V
100 mA
100 mW
150 °C
−55~150
°C
― ― 2-2HA1A
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off curr
RN1112F Datasheet
