The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
RN1710,RN1711
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1710, RN1711
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
z Including two devices in USV (ultra super mini type with 5 leads) z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process z Complementary to RN2710 and RN2711
Unit: mm
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage
Symbol VCBO VCEO VEBO
Rating 50 50 5
USV
Unit
JEDEC
―
V
JEITA
―
V
TOSHIBA
2−2L1A
V
Weight: 6.2 mg (typ.
RN1710 Datasheet
