RN1710JE Datasheet | Toshiba

RN1710JE,RN1711JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1710JE, RN1711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm - Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. - Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more pact equipment and save assembly cost. - Wide range of resistor values are available to use in various circuit designs. - plementary to RN2710JE to RN2711JE Equivalent Circuit R1 B 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) JEDEC ― JEITA ― TOSHIBA ― Weight: 0.003 g (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 mon) Equivalent Circuit (top view) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature...