RN1710 Datasheet | Toshiba

RN1710,RN1711 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1710, RN1711 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in USV (ultra super mini type with 5 leads) z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process z plementary to RN2710 and RN2711 Unit: mm Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 mon) Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO Rating 50 50 5 Unit JEDEC ― JEITA ― TOSHIBA 2- 2L1A Weight: 6.2 mg (typ.) Collector current Collector power dissipation Junction temperature Storage temperature range 100 m A PC- 200 m W Tj °C Tstg - 55 to150 °C Equivalent Circuit (Top View) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). - : Total rating Start of mercial production 1998-02...