logo

RN1710JE Toshiba (https://www.toshiba.com/) Silicon NPN Epitaxial Type Transistors

Title 트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드 2 NPN - 사전 바이어스됨(이중)(에미터 결합) 50V 100mA 250MHz 100mW 표면 실장 ESV
Description RN1710JE,RN1711JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1710JE, RN1711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enabl...
Features ipation Junction temperature Storage temperature range VCBO 50 V VCEO 50 V VEBO 5 V IC 100 mA PC (Note 1) 100 mW Tj 150 °C Tstg −55 to 150 °C Q1 Q2 123 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product...

Datasheet PDF File RN1710JE Datasheet - 257.13KB
Distributor Distributor
DigiKey
Stock 105 In stock
Price
2000 units: 109.333 KRW
1000 units: 122.51 KRW
500 units: 138.104 KRW
100 units: 186.37 KRW
10 units: 297.2 KRW
1 units: 490 KRW
BuyNow BuyNow BuyNow - Manufacturer a Toshiba America Electronic Components RN1710JE(TE85L,F)

RN1710JE   RN1710JE   RN1710JE  



RN1710JE Distributor

Distributor Stock Price BuyNow
Distributor
DigiKey
105
2000 units: 109.333 KRW
1000 units: 122.51 KRW
500 units: 138.104 KRW
100 units: 186.37 KRW
10 units: 297.2 KRW
1 units: 490 KRW
Toshiba America Electronic Components

BuyNow
Distributor
Mouser Electronics
0
1 units: 0.38 USD
10 units: 0.265 USD
100 units: 0.11 USD
1000 units: 0.069 USD
4000 units: 0.068 USD
8000 units: 0.056 USD
24000 units: 0.054 USD
48000 units: 0.048 USD
100000 units: 0.045 USD
Toshiba America Electronic Components





logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map