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RN2118MFV Toshiba (https://www.toshiba.com/) Silicon PNP Epitaxial Type Transistors

Toshiba
Description RN2114MFV to RN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2114MFV, RN2115MFV, RN2116MFV RN2117MFV, RN2118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm  Ultra-small package, suited to very high density mounting  Incorporating a bias resistor into the tra...
Features N2114MFV VCBO −50 V to Collector-emitter voltage RN2118MFV VCEO −50 V RN2114MFV −5 Emitter-base voltage RN2115MFV −6 RN2116MFV VEBO −7 V RN2117MFV −15 RN2118MFV −25 Collector current IC −100 mA Collector power dissipation RN2114MFV PC(Note1) 150 mW to Junction temperature RN2118MFV Tj 150 °C Storage temperature r...

Datasheet PDF File RN2118MFV Datasheet 763.46KB

RN2118MFV   RN2118MFV   RN2118MFV  




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