| Title | 트랜지스터 - 양극(BJT) - 단일, 프리 바이어스드 PNP - 사전 바이어스됨 50V 100mA 150mW 표면 실장 VESM |
| Description | RN2114MFV to RN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2114MFV, RN2115MFV, RN2116MFV RN2117MFV, RN2118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the tra... |
| Features |
N2114MFV
VCBO
−50
V
to
Collector-emitter voltage
RN2118MFV
VCEO
−50
V
RN2114MFV
−5
Emitter-base voltage
RN2115MFV
−6
RN2116MFV
VEBO
−7
V
RN2117MFV
−15
RN2118MFV
−25
Collector current
IC
−100
mA
Collector power dissipation RN2114MFV PC(Note1)
150
mW
to
Junction temperature
RN2118MFV
Tj
150
°C
Storage temperature r...
|
| Datasheet |
 RN2118MFV Datasheet - 763.46KB |
| Distributor |
DigiKey |
| Stock | 3000 In stock |
| Price |
2000 units: 72.9605 KRW 1000 units: 82.293 KRW 500 units: 93.358 KRW 100 units: 127.37 KRW 10 units: 204.8 KRW 1 units: 332 KRW
|
| BuyNow |
 BuyNow - Manufacturer a Toshiba America Electronic Components RN2118MFV(TPL3)
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
DigiKey |
2000 units: 72.9605 KRW 1000 units: 82.293 KRW 500 units: 93.358 KRW 100 units: 127.37 KRW 10 units: 204.8 KRW 1 units: 332 KRW |
BuyNow |
|
 Avnet Americas |
No price available |
