RN2130FV datasheet by Toshiba.
| Part number | RN2130FV |
|---|---|
| Datasheet | RN2130FV-Toshiba.pdf |
| File Size | 110.63 KB |
| Manufacturer | Toshiba |
| Description | Silicon PNP Transistor |
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RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : 0.0015mg (typ.) VCEO −50 V Emitter-base voltage VEBO −10 V Collector current IC −100 mA 0.5mm Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Note: The information contained herein is...
| Part Number | Description |
|---|---|
| RN2130MFV | Silicon PNP Transistor |
| RN2131MFV | Silicon PNP Transistor |
| RN2132MFV | Silicon PNP Transistor |
| RN2101 | Silicon PNP Epitaxial Type Transistors |
| RN2101MFV | Silicon PNP Epitaxial Type Transistors |
| RN2102 | Silicon PNP Epitaxial Type Transistors |
| RN2102MFV | Silicon PNP Epitaxial Type Transistors |
| RN2103 | Silicon PNP Epitaxial Type Transistors |
| RN2103MFV | Silicon PNP Epitaxial Type Transistors |
| RN2104 | Silicon PNP Epitaxial Type Transistors |
