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RN2130FV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2130FV
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Unit : mm
0.22±0.05
0.32±0.05
Built-in bias resistors Simplified circuit design Reduced quantity of parts and manufacturing process Complementary to RN1130FV
1.2±0.05 0.8±0.05
1
1.2±0.05 0.8±0.05 0.4 0.4
Equivalent Circuit
2
3
0.13±0.05
0.5±0.05
VESM
1.BASE 2.EMITTER 3.COLLECTOR
Maximum Ratings (Ta = 25°C)
JEDEC
―
Characteristic
Symbol
Rating
Unit
JEITA
―
Collector-base voltage Collector-emitter voltage
TOSHIBA
2-1L1A
VCBO
−50
V
Weight : 0.0015mg (typ.)
VCEO
−50
V
Emitter-base voltage
VEBO
−10
V
Collector current
IC
−100
mA
0.
RN2130FV Datasheet
