RN2131MFV
RN2131MFV, RN2132MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2131MFV, RN2132MFV
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
Unit: mm
- Ultra-small package, suited to very high density mounting
- Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more pact equipment and lowering assembly cost.
- A wide range of resistor values is available for use in various circuits.
- plementary to the RN1131MFV, RN1132MFV
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
VESM
1.BASE 2.EMITTER 3.COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
1-1Q1S
Weight: 1.5 mg (typ.)
Characterisstic
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range
VCBO
- 50
VCEO
- 50
VEBO
-...
