RN2130FV Description
RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : 0.0015mg (typ.) VCEO −50 V Emitter-base voltage VEBO −10 V Collector current IC −100 mA 0.5mm Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Note: The information contained herein is...