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RN2130FV - Silicon PNP Transistor

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RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm 0.22±0.05 0.32±0.05 Built-in bias resistors Simplified circuit design Reduced quantity of parts and manufacturing process Complementary to RN1130FV 1.2±0.05 0.8±0.05 1 1.2±0.05 0.8±0.05 0.4 0.4 Equivalent Circuit 2 3 0.13±0.05 0.5±0.05 VESM 1.BASE 2.EMITTER 3.COLLECTOR Maximum Ratings (Ta = 25°C) JEDEC ― Characteristic Symbol Rating Unit JEITA ― Collector-base voltage Collector-emitter voltage TOSHIBA 2-1L1A VCBO −50 V Weight : 0.0015mg (typ.) VCEO −50 V Emitter-base voltage VEBO −10 V Collector current IC −100 mA 0.
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