Title | 트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드 2 PNP - 사전 바이어싱됨(이중) 50V 100mA 200mW 표면 실장 USV |
Description | RN2714 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2714 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm Two devices incorporated in a USV (5-pin ultra-super-mini-type) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equiva... |
Features |
current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliabili...
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Datasheet |
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